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Industry Terms |
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Industry Terms |
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This section is designed as a reference to the most frequently used terms and acronyms in the Semiconductor industry. It is by no means comprehensive and we are working continually to add new information. If you feel that there are some terms you would like to appear, or which are not covered then please email us List of Terms click here for Acronym List A B C D E F G H I J K L M N O P Q R S T U V W X Y Z A. Ashing - The process of
removing photoresist with oxygen plasma. B. C. CVD (Chemical Vapour Deposition) - a method for depositing layers of Material onto a surface using a chemical in vapour form. CMOS (Complimentary metal Oxide Semiconductor) N and P - channel MOS transistors on the same chip D. Deposition - process by which layers are formed as a result of a chemical reaction in which the material solidifies to form a layer over the wafer surface. Diffusion - The spontaneous mixture of one substrate with another when in contact with, or separated by, a permeable barrier or microporous barrier. Dipole - a molecule with positive and negatively charged centres. Doping - The introduction of impurity atoms(dopants) into the crystal lattice of a semiconductor. Dry Etch - a process resulting in the selective removal of material, achieved by the use of a gas or plasma. E. Epitaxial - The growth of a single crystal semiconductor film upon a single crystal substrate. Flow - a process step in which the wafer temperature is elevated so that the deposited PSG or BPSG surface layers topography smoothes out due to the films low viscosity at elevated temperatures. G. Gate Oxide - a thin, high quality silicon dioxide film which causes the induction of charge, creating a channel between source and drain regions of a MOS transistor. Gallium (GaAs) - a semiconductor material with the advantage of producing Arsenide radiation-resistant and higher speed devices than those using silicon. H. Hole - The absence of a valence electron in a semiconductor crystal. Motion of a hole is equivalent to motion of a positive charge. I. Intermetal - (IMD) films that insulate between two conductive layers of material dielectric. J. K. L. LPCVD - (Low pressure chemical Vapour Deposition) - A CVD system using an environment where the pressure is lower than atmospheric. M. Mask - a glass plate covered with an array of patterns used in the photomasking process. Mask patterns may be formed in emulsion, chrome, iron oxide, silicon or a number of other opaque materials. Metalisation - The deposition of a thin film pattern of conductive material onto a substrate to provide interconnection of electronic components to provide electric contacts. N. Negative - Photoresist that remains in areas that were not protected from exposure Resist - by the opaque regions of a mask while being removed by the developer In regions that were protected. A negative image of the mask remains following the development process. O. P. Passivation - The final layer in a semiconductor device, forming a hermetic seal over the circuit elements. Plasma nitride and silicon dioxide are materials primarily used for passivation. Photoresist - The light sensitive organic polymer film spun onto wafers and "exposed" using high-intensity light through a mask. The exposed photoresist is dissolved with developers, leaving a pattern of photoresist which allows etching to take place in some areas whilst preventing it in others. Plasma Etching - The use of energised
gases to chemically remove a surface. Q. R. RIE (Reactive Ion Etching) - an etching process that combines plasma and Ion beam removal of the surface layer. The etchant gas enters the reaction chamber and is ionised. The individual molecules accelerate to the wafer surface. At the surface, the layer removal is achieved by the physical and chemical removal of the material. S. Silicon - a non-conductive layer that can be thermally grown or deposited Nitride - silicon wafers. Thermal silicon dioxide is commonly grown using either oxygen or water vapour at temperatures above 900°C. Sputtering - a method of depositing a thin film of material on water surfaces. A target of the desired material is bombarded with radio frequency-excited ions which knock atoms from the target; the dislodged target material deposits on the wafer surface. Stepper - a machine which steps a reticule directly onto the wafer. A reticule can be produced at a lower defect level and with tighter dimensional control than an entire mask, resulting in wafers images having fewer defects. Stripping - removal process usually referring to photoresist. T. Target - The material to be spluttered during the spluttering process. Thermal Diffusion - a process by which dopants atoms diffuse into the wafer surface by heating the wafer in the range of 1000°C and exposing it to vapours containing the desired dopant. U. V. Vapour Evaporation - a deposition technique whereby the deposited gas results from evaporation process. W. X. Y.
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